Modelling nanocrystal growth via the precipitation method
نویسندگان
چکیده
A mathematical model for the growth of a single nanocrystal is generalised to deal with an arbitrarily large number crystals. The basic form Stefan problem, describing diffusion monomer over moving domain. Various levels approximation (an analytical solution, ordinary differential equation and N particle model) are compared shown agree well. solution then have excellent agreement experimental data CdSe nanocrystals. theoretical clearly shows effect problem parameters on process and, significantly, that there controlling group. By increasing value it in absence Ostwald ripening may be considered as representing average radius system particles. Consequently N=2 represent either two or bimodel initial distribution. provides understanding ripening. In general if expected some should employed. Finally how employed multi-stage which can guide optimise crystal growth.
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ژورنال
عنوان ژورنال: International Journal of Heat and Mass Transfer
سال: 2021
ISSN: ['1879-2189', '0017-9310']
DOI: https://doi.org/10.1016/j.ijheatmasstransfer.2020.120643